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2N7002,215 Nexperia USA Inc. | Partsmax Türkiye

Product Features

The Nexperia MOSFETs are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is 30 V. Its maximum power dissipation is 830 mW. This MOSFET has an operating temperature range of -65°C to 150°C.

Features and Benefits:
• Suitable for logic level gate drive sources
• Very fast switching
• Surface-mounted package
• Trench MOSFET technology

Application:
• Logic level translators
• High-speed line drivers

Product Technical Specifications

EU RoHS Compliant 
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
SVHC Yes
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Process Technology TMOS
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 60
Maximum Gate Source Voltage (V) 30
Maximum Gate Threshold Voltage (V) 2.5
Operating Junction Temperature (°C) -65 to 150
Maximum Continuous Drain Current (A) 0.3
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 5000@10V
Typical Reverse Recovery Charge (nC) 30
Typical Input Capacitance @ Vds (pF) 31@10V
Typical Reverse Transfer Capacitance @ Vds (pF) 3.5@10V
Minimum Gate Threshold Voltage (V) 1
Typical Output Capacitance (pF) 6.8
Maximum Power Dissipation (mW) 830
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Maximum Positive Gate Source Voltage (V) 30
Maximum Pulsed Drain Current @ TC=25°C (A) 1.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 350
Typical Diode Forward Voltage (V) 0.85
Typical Reverse Recovery Time (ns) 30
Max